Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43650
標題: Effects of humidity on nano-oxidation of silicon nitride thin film
作者: Hsu, H.F.
許薰丰
Lee, C.W.
關鍵字: atomic force microscopy
oxidation
silicon nitride
kinetics
humidity
scanned probe oxidation
atomic-force microscope
growth-rate
enhancement
thermal-oxidation
local oxidation
dry oxygen
fabrication
kinetics
nanofabrication
surface
期刊/報告no:: Ultramicroscopy, Volume 108, Issue 10, Page(s) 1076-1080.
摘要: Effects Of humidity on nanometer-scale oxidation of silicon nitride thin film using atomic force microscope in contact mode are studied at various Values of relative humidity (RH) (30-70%). The shape of oxide protrusion is determined by the concentration of oxyanions under the tip apex and oxyanions diffusion laterally on the surface. At low RH (<= 60%), the kinetics of silicon nitride oxidation has a logarithmic relationship to oxide height versus oxidation time. The threshold time decreased and initial oxidation rate increased simultaneously as humidity increased because a high concentration of oxyanions at the oxide/silicon nitride interface was generated. When a high sample voltage (9-10V) is applied at high RH (>= 60%), the effective electric field is decreased because of the electron being trapped in the oxide and oxyanions accumulating on the oxide surface. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43650
ISSN: 0304-3991
文章連結: http://dx.doi.org/10.1016/j.ultramic.2008.04.025
Appears in Collections:材料科學與工程學系

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