請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43755
標題: Electron-Beam and Sputter-Deposited Indium-Tin Oxide Omnidirectional Reflectors for High-Power Wafer-Bonded AlGaInP Light-Emitting Diodes
作者: Hsu, S.C.
洪瑞華
Wuu, D.S.
Zheng, X.H.
Horng, R.H.
武東星
關鍵字: aluminium compounds
annealing
beryllium alloys
electrical
resistivity
electron beam deposition
gallium compounds
gold
gold
alloys
III-V semiconductors
indium compounds
light emitting diodes
light reflection
ohmic contacts
reflectivity
refractive index
rough
surfaces
silver
sputter deposition
surface morphology
thin films
vacuum deposition
ito thin-films
vapor-deposition
efficiency
microstructure
fabrication
contacts
layer
期刊/報告no:: Journal of the Electrochemical Society, Volume 156, Issue 4, Page(s) H281-H284.
摘要: Performance variation of 1 mm(2) high-power wafer-bonded AlGaInP light-emitting diode (LED) with an emission wavelength of 630 nm induced by E-beam and sputter-deposited indium-tin oxide (ITO) films, one component of triple-layer omnidirectional reflectors (ODRs), has been investigated in detail. The entire ODRs consist of p-GaP, dispersive dot contacts of Au/AuBe/Au acting as ohmic contacts, an intermediate low-refractive index ITO, and a silver (Ag) layer. The results show that annealing under nitrogen atmosphere yields a much rougher surface for the E-beam evaporated ITO than that for the magnetron sputtered one, which leads to a lower reflectivity of the ITO/Ag system. A similar resistivity of the two ITO films after annealing confirms no influence on the current-voltage characteristics of the corresponding devices. The smoother surface morphology of the sputter-deposited ITO after annealing enhances the light output power of 18% as compared to the one with the E-beam evaporated ITO at 350 mA for the ITO ODR-based AlGaInP LEDs.
URI: http://hdl.handle.net/11455/43755
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/1.3079618
顯示於類別:材料科學與工程學系

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