Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43761
標題: Effects of radio frequency powers on the characteristics of a-C:N/p-Si photovoltaic solar cells prepared by plasma enhanced chemical vapor deposition
作者: Chu, R.S.
薛顯宗
Shiue, S.T.
關鍵字: Plasma enhanced chemical vapor deposition
Carbon
Photovoltaic
solar
cell
coated optical-fibers
carbon nitride films
induced stress voids
h
thin-films
amorphous-carbon
c-n
diamond
hydrogen
cvd
期刊/報告no:: Surface & Coatings Technology, Volume 202, Issue 22-23, Page(s) 5364-5366.
摘要: The effects of radio frequency (rf) powers on the characteristics of a-C:N/p-Si photovoltaic solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) are investigated. As the rf-power raises from 100 to 400 W, the N doping content of a-C:N films increases and the microstructure of a-C:N films is transformed to graphite-like. Alternatively, the short-circuit current and conversion efficiency of a-C:N/p-Si photovoltaic solar cells increase with increasing the rf-power, but the open-circuit voltage and fill factor are less dependent on the rf-power. Although the best performance of a-C:N/p-Si photovoltaic solar cells is achieved with the rf-power of 400 W in this work, it is expected that the performance of a-C:N/p-Si photovoltaic solar cells can be further improved by increasing the rf-power, or adding applied bias and magnetic field on PECVD system. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43761
ISSN: 0257-8972
文章連結: http://dx.doi.org/10.1016/j.surfcoat.2008.06.072
Appears in Collections:材料科學與工程學系

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