Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43771
標題: Effects of different nitrogen/methane ratios on the residual stress of a-C:N thin films prepared by plasma enhanced chemical vapor deposition
作者: Chu, R.S.
薛顯宗
Shiue, S.T.
關鍵字: Residual stress
Carbon
a-C:N
Thin films
Plasma enhanced chemical
vapor deposition
carbon nitride films
amorphous-carbon
optical-properties
structural-properties
sputtering method
diamond
raman
coatings
microstructure
期刊/報告no:: Thin Solid Films, Volume 517, Issue 17, Page(s) 4879-4882.
摘要: The effects of different nitrogen/methane (N(2)/CH(4)) ratios on the residual stress (sigma(r)) of nitrogenated amorphous carbon (a-C:N) thin films prepared by plasma enhanced chemical vapor deposition are investigated. The microstructure, optical and mechanical properties of a-C:N films are evaluated. Meanwhile, the sigma(r) of a-C:N films is analyzed using the laser curvature method, and the sigma(r) connected to the above material properties of a-C:N films is discussed in detail. As the N(2)/CH(4) ratio increases from 0 to 1.4, the sp(2) domain size of a-C:N films increases, while the optical band gap, Young's modulus and hardness of a-C:N films decrease. Alternatively, the sigma(r) of a-C:N films decreases with increasing the N(2)/CH(4) ratio, and the maximum stress reduction of a-C:N films is achieved with N(2)/CH(4) ratio of 1.4 in this article. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/43771
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2009.03.085
Appears in Collections:材料科學與工程學系

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