Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43806
標題: Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering
作者: Wang, Fang-Hsing
Chang, Hung-Peng
Tseng, Chih-Chung
Huang, Chia-Cheng
關鍵字: Transparent conductive oxide
Al-doped ZnO
Sputtering
Thin film
出版社: Elsevier B.V.
摘要: Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio-frequency magnetron sputtering at deposition temperatures ranging from room temperature (RT) to 300 C for transparent electrode applications. This study investigates the effects of H2 plasma treatment on structural, electrical, and optical properties of AZO thin films. Plasma treatment was conducted at 300 C using a plasma-enhanced chemical vapor deposition system for potential large size substrate applications. The crystal structure of plasma treated AZO films did not change considerably, but the surface roughness and surface grain size increased slightly. Improvement in electrical properties was strongly dependent on the deposition temperature. When the deposition temperature ranged from 300 C to RT, the resistivity of plasma treated films decreased significantly by 22.7% to 97.6%, and the optical bandgap broadened by 0.011 to 0.076 eV.
URI: http://hdl.handle.net/11455/43806
ISSN: 0257-8972
Appears in Collections:電機工程學系所

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