請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43871
標題: Fabrication of the InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process
作者: Lin, C.F.
顏秀崗
Yang, C.C.
Chien, J.F.
Lin, C.M.
Chen, K.T.
Yen, S.K.
林佳鋒
關鍵字: InGaN
light-emitting diodes (LEDs)
photoeletrochemical process
wet-lateral-etching process
gallium nitride
surfaces
期刊/報告no:: Ieee Photonics Technology Letters, Volume 21, Issue 16, Page(s) 1142-1144.
摘要: InGaN-based light-emitting diodes (LEDs) with a lateral-etched (LE) undercut structure were fabricated through a photoelectrochemical-etching process. The LE-LED was fabricated with an undercut structure, where the InGaN layer acted as a sacrificial layer without reducing the effective emission area. The electroluminescence (EL) spectrum of the LE-LED had a wavelength blueshift phenomenon of 4.6 nm when compared with a standard-LED (ST-LED) at a 30-A/cm(2) current density. The wavelength blueshift phenomenon of the EL emission peaks were measured as 5.5 and 4.3 nm by varying the injection current density from 1.5 to 30 A/cm(2) for the ST-LED and the LE-LED. In a bias-dependent micro-photoluminescence measurement, the blueshift phenomenon of a peak wavelength for the LE-LED was smaller than for the ST-LED. These results were attributed to a partially reduced piezoelectric field in the InGaN active layer and larger light extraction efficiency in the LE-LED structure.
URI: http://hdl.handle.net/11455/43871
ISSN: 1041-1135
文章連結: http://dx.doi.org/10.1109/lpt.2009.2023677
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。