請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43885
標題: InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process
作者: Lin, C.F.
洪瑞華
Lin, C.M.
Yang, C.C.
Wang, W.K.
Huang, Y.C.
Chen, J.A.
Horng, R.H.
林佳鋒
關鍵字: aluminium compounds
buffer layers
etching
III-V semiconductors
indium compounds
laser materials processing
light emitting diodes
surface structure
nitride-based leds
extraction-efficiency
photonic crystal
gan
surface
output
blue
enhancement
oxidation
devices
期刊/報告no:: Electrochemical and Solid State Letters, Volume 12, Issue 7, Page(s) H233-H237.
摘要: The InGaN-based light-emitting diodes (LEDs) were fabricated through a crystallographic etching process to increase their light extraction efficiency. After the laser scribing and the selective lateral wet etching processes at the LED chip edge region, the stable crystallographic etching planes were formed as the GaN {1012e} planes and had an including angle with the top GaN (0001) plane measured as 40.3 degrees. The AlN buffer layer acted as the sacrificial layer for the lateral wet process with a 27.5 mu m/h etching rate. The continuous cone-shaped sidewall (CSS) structure of the treated LED has a larger light-scattering area and higher light extraction cones around the LED chips. The LED with the CSS structure around the chip edge region has a higher light output power compared to a conventional LED when measured in LED chip form.
URI: http://hdl.handle.net/11455/43885
ISSN: 1099-0062
文章連結: http://dx.doi.org/10.1149/1.3118503
顯示於類別:材料科學與工程學系

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