請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43893
標題: Fabrication and efficiency improvement of micropillar InGaN/Cu light-emitting diodes with vertical electrodes
作者: Wang, W.K.
洪瑞華
Huang, S.Y.
Huang, S.H.
Wen, K.S.
Wuu, D.S.
Horng, R.H.
武東星
關鍵字: external quantum efficiency
extraction efficiency
gan
sapphire
surface
power
output
leds
期刊/報告no:: Applied Physics Letters, Volume 88, Issue 18.
摘要: We present a micropillar surface structure based on the enhancement of the light extraction efficiency of the near-ultraviolet (409 nm) vertical-conducting InGaN light-emitting diode (LED) with an electroplated Cu substrate. The micropillar InGaN/Cu LED (chip size: 1x1 mm(2)) was fabricated using a combination of patterned sapphire substrate (PSS), laser lift-off, and copper electroplating processes. The PSS and Cu substrate can offer the advantages of dislocation reduction and thermal heat sink, respectively. It was found that the light output power (at 350 mA) of the micropillar InGaN/Cu LED sample can be improved by 39% as compared with that of the conventional InGaN/Cu LED one. This significant enhancement in output power could be attributed to the increase of the extraction efficiency which is a result of the increase in photon escaping probability caused by scattering the emission light at the micropillar surface. The light extraction efficiency can be further optimized by tuning the micropillar spacing, as evidenced by the ray-tracing simulation result. (c) 2006 American Institute of Physics.
URI: http://hdl.handle.net/11455/43893
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.2201622
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。