請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43903
標題: Incubation effects upon polycrystalline silicon on glass deposited by hot-wire CVD
作者: Lien, S.Y.
洪瑞華
Mao, H.Y.
Wu, B.R.
Horng, R.H.
Wuu, D.S.
武東星
關鍵字: growth mechanism
hot-wire CVD
polycrystalline silicon
Raman
spectroscopy
transmission electron microscopy
chemical-vapor-deposition
hydrogenated amorphous-silicon
microcrystalline silicon
solar-cells
raman-scattering
films
hwcvd
pecvd
quality
growth
期刊/報告no:: Chemical Vapor Deposition, Volume 13, Issue 5, Page(s) 247-252.
摘要: A growth mechanism diagnosis for high-rate, polycrystalline silicon deposition using hot-wire CVD is explored in this article. The effects of various deposition parameters on the Si film growth are investigated by Raman spectroscopy and transmission electron microscopy (TEM) measurements, with special attention paid to the crystalline and amorphous phases. It is found that the H-2/SiH4 ratio and substrate temperature (T-s) are the essential process parameters in determining the crystalline phase and the incubation thickness of the as-deposited Si film. Under low hydrogen dilution conditions, an amorphous incubation layer was formed and degraded the crystalline fraction of the Si film. The incubation thickness prior to the nucleation decreases with the increase of the hydrogen dilution ratio. Under higher H-2/SiH4 ratios (>= 50), the amorphous phase deposited on the substrate could be etched selectively by the atomic hydrogen. As a consequence, nucleation of small crystallite occurs directly on the substrate. At low substrate temperatures, the deposition process shows the disadvantages of small grain size and low crystallinity. The poly-Si film can be deposited from the seed layer under high Ts conditions (>350 degrees C) where the Si appears singly crystallized at the initial stage and then grows epitaxially.
URI: http://hdl.handle.net/11455/43903
ISSN: 0948-1907
文章連結: http://dx.doi.org/10.1002/cvde.200606576
顯示於類別:材料科學與工程學系

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