請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43920
標題: Thermal Management Design from Chip to Package for High Power InGaN/Sapphire LED Applications
作者: Horng, R.H.
洪瑞華
Chiang, C.C.
Tsai, Y.L.
Lin, C.P.
Kan, K.
Lin, H.I.
Wuu, D.S.
武東星
關鍵字: chip scale packaging
diamond-like carbon
gallium compounds
heat
sinks
III-V semiconductors
indium compounds
light emitting diodes
power semiconductor diodes
sapphire
wide band gap semiconductors
light-emitting-diodes
gan
期刊/報告no:: Electrochemical and Solid State Letters, Volume 12, Issue 6, Page(s) H222-H225.
摘要: Device performances were investigated for InGaN/sapphire light-emitting diodes (LEDs) with advanced heat dissipation design from chip to package. By directly contacting a copper heat spreader with sapphire, the maximum junction temperature of the LED chip was reduced from 62.9 degrees C of a conventional LED to 48.3 degrees C at an injection current of 350 mA. Further temperature reduction to 37.3 degrees C could be achieved by packaging the copper-surrounded LED chip on the heat sink coated with a diamond-like layer which acts as the second heat spreader. The reduced junction temperature was attributed to good heat dissipation from both the copper and the diamond-like layer due to their low thermal resistance. The copper heat spreader not only extracts heat efficiently, but also enhances the light extraction of the LED, as the copper was designed with a proper geometry such as cup-shaped profile. The improved LED performance suggests that the proposed thermal management from chip to package is an efficient alternative for high power applications.
URI: http://hdl.handle.net/11455/43920
ISSN: 1099-0062
文章連結: http://dx.doi.org/10.1149/1.3110040
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。