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|標題:||Ultra high-density silicon nanowires for extremely low reflection in visible regime|
|出版社:||AMER INST PHYSICS.|
|摘要:||We fabricated large-area, vertically aligned silicon nanowire (SiNW) arrays on Si substrates employing catalytic etching on a polystyrene nanosphere template. The density of SiNWs was as high as 10(10)/cm(2), and the bottom radii of SiNWs ranged between 30 and 60 nm. The reflection from the SiNW layer was approximately 0.1% over the spectral range of 300-800nm for SiNWs longer than 750 am. Effective medium theory was applied to explain this extremely low reflection, and it was confirmed that the incident light scatters randomly inside cone-like SiNWs, which lengthens the actual traveling path of light.|
|Appears in Collections:||電機工程學系所|
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