請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43939
標題: Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching
作者: Hsu, S.C.
洪瑞華
Lee, C.Y.
Hwang, J.M.
Su, J.Y.
Wuu, D.S.
Horng, R.H.
武東星
關鍵字: gallium nitride (GaN)
light-emitting diode (LED)
light extraction
photoelectrochemical (PEC)
wet
efficient
期刊/報告no:: Ieee Photonics Technology Letters, Volume 18, Issue 21-24, Page(s) 2472-2474.
摘要: We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0 degrees which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED.
URI: http://hdl.handle.net/11455/43939
ISSN: 1041-1135
文章連結: http://dx.doi.org/10.1109/lpt.2006.886862
顯示於類別:材料科學與工程學系

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