請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43940
標題: Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
作者: Wuu, D.S.
洪瑞華
Wang, W.K.
Shih, W.C.
Horng, R.H.
Lee, C.E.
Lin, W.Y.
Fang, J.S.
武東星
關鍵字: GaN
InGaN
light-emitting diode (LED)
near ultraviolet (UV)
patterned
sapphire substrate (PSS)
light-emitting-diodes
white-light
期刊/報告no:: Ieee Photonics Technology Letters, Volume 17, Issue 2, Page(s) 288-290.
摘要: Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.
URI: http://hdl.handle.net/11455/43940
ISSN: 1041-1135
文章連結: http://dx.doi.org/10.1109/lpt.2004.839012
顯示於類別:材料科學與工程學系

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