Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43943
標題: High-efficiency 1-mm(2) AlGaInP LEDs sandwiched by ITO omni-directional reflector and current-spreading layer
作者: Hsu, S.C.
洪瑞華
Wuu, D.S.
Lee, C.Y.
Su, J.Y.
Horng, R.H.
武東星
關鍵字: AlGaInP
current spreading layer
light-emitting diode (LED)
omni-directional reflector (ODR)
light-emitting-diodes
quantum efficiency
期刊/報告no:: Ieee Photonics Technology Letters, Volume 19, Issue 5-8, Page(s) 492-494.
摘要: A 1-mm(2) AlGaInP light-emitting diode (LED) sandwiched by an onmi-directional reflector (ODR) and currentspreading layer is presented. The vertical-conducting bottom ODR consists of p-GaP, dispersive dot-contacts of Au-AuBe-Au acting as ohmic contacts, an intermediate low-refractive index layer of indium-tin-oxide, and a silver layer. A Si substrate, which acted as a heat sink, was bonded to the ODR-covered LED structure using a metal-to-metal bonding process. It was found that the maximum output power of the ODR-LED on Si reached 304 mW at 650 mA, and the output power did not saturate up to 650-mA injection current. The external quantum efficiency of 31.8% was obtained at 100 mA, and 19.4% achieved even at currents of up to 800 mA. Furthermore, under a forward current of 350 mA, the ODR-LEDs remained highly reliable after 1000-h testing at room temperature.
URI: http://hdl.handle.net/11455/43943
ISSN: 1041-1135
文章連結: http://dx.doi.org/10.1109/lpt.2007.893820
Appears in Collections:材料科學與工程學系

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