Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43950
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dc.contributor.authorHorng, R.H.en_US
dc.contributor.author洪瑞華zh_TW
dc.contributor.authorLu, Y.A.en_US
dc.contributor.authorWuu, D.S.en_US
dc.contributor.author武東星zh_TW
dc.date2011zh_TW
dc.date.accessioned2014-06-06T08:11:43Z-
dc.date.available2014-06-06T08:11:43Z-
dc.identifier.issn1041-1135zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43950-
dc.description.abstractLight extraction in thin-film GaN light-emitting diodes (LEDs) prepared with Si substrates pretreated by surface roughening and imbedded electrodes were studied. The LEDs were fabricated with a roughened p-GaN layer, followed by epilayer transferring. There are four types of LEDs: conventional LEDs (C-LED), n-side-up thin GaN LEDs with imbedded electrodes and a KOH-roughened n-GaN (first-type LED), p-side-up thin GaN LEDs with a KOH-roughened n-GaN (second-type LED), and n-side-up thin GaN LEDs with imbedded electrodes and without KOH-roughened n-GaN (third-type LED). The electrical properties of the LEDs are almost the same. However, they differ in luminance intensity. The luminance intensities (at 350 mA) of C-LED, first-type, second-type, and third-type LEDs are 3468, 9105, 7610, and 7047 mcd, respectively. The brightest LED is first-type LED. This may be due to emission surface with pyramidal-textured surface and without light shading electrodes. They enhance the light extraction for first-type LEDs.en_US
dc.language.isoen_USzh_TW
dc.relationIeee Photonics Technology Lettersen_US
dc.relation.ispartofseriesIeee Photonics Technology Letters, Volume 23, Issue 1, Page(s) 54-56.en_US
dc.relation.urihttp://dx.doi.org/10.1109/lpt.2010.2090946en_US
dc.subjectLight extractionen_US
dc.subjectimbedded electrodesen_US
dc.subjectthin-film GaN light-emittingen_US
dc.subjectdiodes (LEDs)en_US
dc.subjectpyramidal-textured surfaceen_US
dc.subjectsapphireen_US
dc.subjectperformanceen_US
dc.subjectledsen_US
dc.titleLight Extraction Investigation for Thin-Film GaN Light-Emitting Diodes With Imbedded Electrodesen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1109/lpt.2010.2090946zh_TW
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