Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43959
標題: High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer
作者: Hsu, S.C.
洪瑞華
Wuu, D.S.
Zheng, X.H.
Horng, R.H.
Su, J.Y.
武東星
關鍵字: GaP contact layer
AlGaInP
indium-tin oxide (ITO)
light-emitting diode
(LED)
gap window layer
leds
improvement
ito
期刊/報告no:: Japanese Journal of Applied Physics, Volume 47, Issue 9, Page(s) 7023-7025.
摘要: An alternative heavily carbon-doped GaP (GaP:C) contact layer is demonstrated to format good ohmic contact to electronbeam-evaporation indium-tin oxide (ITO) spreading layer on the AlGaInP light-emitting diode (LED) with a GaAs absorbing substrate. The LEDs with GaP:C/ITO contact layer provide a substantial improvement in light output power over conventional structures (without GaP:C/ITO). The AlGaInP LEDs with GaP:C/ITO structures exhibited :l higher external quantum efficiency (3.24%) and larger light output power (5.9mW) under a de operation of 160mA than those of 2.01% and 1.93 mW at 120 mA for the conventional structures, showing an earlier saturation behavior of current-power characteristics. These positive results are tentatively attributed to the introduction of the GaP:C/ITO current-spreading structures in the LEDs.
URI: http://hdl.handle.net/11455/43959
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.47.7023
Appears in Collections:材料科學與工程學系

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