請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/43982
標題: Ion-implantation treatment (Ba, Sr)TiO3 thin films
作者: Horng, R.H.
洪瑞華
Wuu, D.S.
Kung, C.Y.
Lin, C.C.
Leu, C.C.
Haung, T.Y.
Sze, S.M.
武東星
關鍵字: ion-implantation
spin-on sol-gel
refractive index
densification
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Volume 39, Issue 12A, Page(s) 6614-6618.
摘要: The effects of ion-implantation on the properties of spin-on sol-gel (Ba, Sr),TiO3 (BST) thin films were studied by implanting with Ar+, N+ and F+ doses. The F+ implanted BST samples present better electrical and dielectric properties than the A(+) or Nt implanted BST do. The pronounced thickness shrinkage was observed in BST films after the F+ implantation (before annealing treatment) and a respective increase in the refractive index was measured. After the implanted samples are annealed, the changes of thickness and refractive index depend on the concentration of the implanted dose. If the F+ implanted dose is low (similar to5 x 10(14) cm(-2)), the BST preserves the densification propel-ties. Its refractive index increases to 2.23 and it also presents a high dielectric constant of about 520. If the F+ implanted dose is high (greater than or equal to similar to1 x 10(15) cm(-2)), excess F+ ions form Sr or Ba bondings with F+. This will degrade the material, electric and dielectric properties. The corresponding dielectric constant is about 440. An infrared transmission study of the samples suggests that the ion-implanted sample with lower doses have fewer -OH contaminants than the non-implanted or implanted samples with high doses. Based on the results presented, it was concluded that suitable ion-implantation densifies the spin-on sol-gel BST films and reduces the -OH contaminants in the films.
URI: http://hdl.handle.net/11455/43982
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.39.6614
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。