請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/44006
標題: Improvements of transparent electrode materials for GaN metal-semiconductor-metal photodetectors
作者: Wuu, D.S.
洪瑞華
Hsu, S.C.
Horng, R.H.
武東星
關鍵字: chemical-vapor-deposition
ultraviolet photodetectors
responsivity
photodiodes
期刊/報告no:: Journal of Materials Science-Materials in Electronics, Volume 15, Issue 12, Page(s) 793-796.
摘要: Metal-semiconductor-metal (MSM) photodetectors based on GaN grown on (0001) sapphire were fabricated and characterized. The responsivity of the Pt/GaN MSM device is low due to the blocking of incoming light by Pt electrodes. Although this problem can be partly solved by the transparent indium-tin oxide (ITO) contact, the range of operation voltage for ITO/GaN MSM devices is limited by the internal gain. Transparent multilayered electrode is proposed in this work by incorporating various intermediate layers (Ti, TiO2, and Ti/TiO2). The dark current of the ITO/TiO2/GaN contact is two orders of magnitude lower than that of the ITO/Ti/GaN contact. The thin TiO2 barrier also contributes the lower responsivity of the ITO/TiO2/GaN structure. By introducing a thin Ti/TiO2 interlayer at the ITO-GaN interface, a significant decrease in the dark current and an increase in responsivity can be achieved simultaneously. The photo-to-dark current contrast can reach 6 x 10(5), and the responsivity shows no discernible internal gain under a bias between 2.5 and 7.5V. (C) 2004 Kluwer Academic Publishers.
URI: http://hdl.handle.net/11455/44006
ISSN: 0957-4522
文章連結: http://dx.doi.org/10.1023/B:JMSE.0000045301.37195.d7
顯示於類別:材料科學與工程學系

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