Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44014
標題: Ion-implanted treatment of (Ba, Sr)TiO3 films for DRAM applications
作者: Horng, R.H.
洪瑞華
Wuu, D.S.
Kung, C.Y.
Lin, J.C.
Leu, C.C.
Huang, T.Y.
Sze, S.M.
武東星
關鍵字: thin-films
期刊/報告no:: Journal of Non-Crystalline Solids, Volume 280, Issue 1-3, Page(s) 48-53.
摘要: The effects of ion implantation on the properties of spin-on sol-gel Ba0.7ST0.3TiO3 (BST) thin films were studied by implanted Ar+, N+, and F+ doses. The F+-implanted BST samples present leakage current density <10(-6) A/cm(2) at 2.5 V and dielectric constant <similar to>450. The leakage current of F+-implanted BST samples was reduced about one order of magnitude as compared with that of samples with implanted Ar+, N+ or without implantation. The thickness shrinkage from 135 to 115 nm was observed in F+-implanted BST films (before annealing treatment) and a respective increase in the refractive index from 1.84 to 2.05 was measured. After annealing the implanted samples, the changes of thickness and refractive index depend on the concentration of implanted dose. Based on an infrared transmission study of the samples we suggest that the ion-implanted samples with smaller dose (5 x 10(14) cm(-2)) have fewer -OH contaminants than the non-implanted or implanted samples with the larger doses (greater than or equal to1 x 10(15) cm(-2)). Based on the results presented, we conclude that suitable ion implantation densities the spin-on sol-gel BST films and reduces the -OH contaminants in the films. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/11455/44014
ISSN: 0022-3093
文章連結: http://dx.doi.org/10.1016/s0022-3093(00)00353-7
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