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|標題:||Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films|
|期刊/報告no：:||Microelectronics Reliability, Volume 40, Issue 4-5, Page(s) 667-670.|
|摘要:||The effects of F-ion implantation on the leakage and dielectric properties of the Ba0.7Sr0.3TiO3 (BST) films were investigated. The BST film implanted with 1 x 10(15) cm(-2) shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5 x 10(14) to 5 x 10(15) cm(-2), the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the -OH contaminants and improve the dielectric and leakage properties. (C) 2000 Elsevier Science Ltd. All rights reserved.|
|Appears in Collections:||材料科學與工程學系|
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