Please use this identifier to cite or link to this item:
|標題:||High-power GaN light-emitting diodes with patterned copper substrates by electroplating|
|期刊/報告no：:||Physica Status Solidi a-Applied Research, Volume 201, Issue 12, Page(s) 2786-2790.|
|摘要:||A high-power chip structure of GaN/mirror/Cu light-emitting diodes (LEDs) was developed by a combination of laser lift-off and electroplating techniques. Especially, the LED samples can be accomplished without additional scribing or dicing process. The luminance intensity of the GaN/mirror/Cu LED is about 50% higher than that of the original GaN/sapphire sample. The output power of the GaN/mirror/Cu LED increases linearly with injection current up to 180 mA, while early saturation of the GaN/sapphire device occurs at 70 mA. These indicate that the joule heating is less pronounced for the GaN/mirror/Cu LED sample where the metallic substrate provides a good heat sink.|
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.