請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/44053
標題: Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs
作者: Huang, S.Y.
洪瑞華
Horng, R.H.
Tsai, Y.J.
Lin, P.R.
Wang, W.K.
Feng, Z.C.
Wuu, D.S.
武東星
關鍵字: light-emitting-diodes
650 nm
fabrication
lasers
期刊/報告no:: Semiconductor Science and Technology, Volume 25, Issue 3.
摘要: GaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates with a current confinement by hydrogen (H) implantation. In order to ascertain the optimum implantation concentration for the current confinement layer of RCLEDs, the effects of implantation concentration (as-grown, 10(13), 10(14) and 10(15) ions cm(-2)) on the characteristics of a p-GaN cladding layer were investigated in terms of Hall measurements, photoluminescence (PL) spectra and x-ray (XRD) diffraction. The properties of PL, XRD and contact resistance of the epi-LED wafers with different implantation concentrations were also analyzed. An optimum H-implantation concentration of 10(14) ions cm(-2) has been determined based on the current confinement performance. Under this condition, the 10(14) ions cm(-2) implanted RCLED sample shows the higher electroluminescence intensity than that of the SiO(2)-insulated RCLED one. Furthermore, the light emission pattern of the 10(14) ions cm(-2) implanted RCLED also shows a superior directionality. The improved results could be attributed to the better current and photon confinements laterally in the light aperture.
URI: http://hdl.handle.net/11455/44053
ISSN: 0268-1242
文章連結: http://dx.doi.org/10.1088/0268-1242/25/3/035013
顯示於類別:材料科學與工程學系

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。