Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44053
DC FieldValueLanguage
dc.contributor.authorHuang, S.Y.en_US
dc.contributor.author洪瑞華zh_TW
dc.contributor.authorHorng, R.H.en_US
dc.contributor.authorTsai, Y.J.en_US
dc.contributor.authorLin, P.R.en_US
dc.contributor.authorWang, W.K.en_US
dc.contributor.authorFeng, Z.C.en_US
dc.contributor.authorWuu, D.S.en_US
dc.contributor.author武東星zh_TW
dc.date2010zh_TW
dc.date.accessioned2014-06-06T08:11:51Z-
dc.date.available2014-06-06T08:11:51Z-
dc.identifier.issn0268-1242zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/44053-
dc.description.abstractGaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates with a current confinement by hydrogen (H) implantation. In order to ascertain the optimum implantation concentration for the current confinement layer of RCLEDs, the effects of implantation concentration (as-grown, 10(13), 10(14) and 10(15) ions cm(-2)) on the characteristics of a p-GaN cladding layer were investigated in terms of Hall measurements, photoluminescence (PL) spectra and x-ray (XRD) diffraction. The properties of PL, XRD and contact resistance of the epi-LED wafers with different implantation concentrations were also analyzed. An optimum H-implantation concentration of 10(14) ions cm(-2) has been determined based on the current confinement performance. Under this condition, the 10(14) ions cm(-2) implanted RCLED sample shows the higher electroluminescence intensity than that of the SiO(2)-insulated RCLED one. Furthermore, the light emission pattern of the 10(14) ions cm(-2) implanted RCLED also shows a superior directionality. The improved results could be attributed to the better current and photon confinements laterally in the light aperture.en_US
dc.language.isoen_USzh_TW
dc.relationSemiconductor Science and Technologyen_US
dc.relation.ispartofseriesSemiconductor Science and Technology, Volume 25, Issue 3.en_US
dc.relation.urihttp://dx.doi.org/10.1088/0268-1242/25/3/035013en_US
dc.subjectlight-emitting-diodesen_US
dc.subject650 nmen_US
dc.subjectfabricationen_US
dc.subjectlasersen_US
dc.titleInfluence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDsen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1088/0268-1242/25/3/035013zh_TW
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