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|標題:||Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDs|
|期刊/報告no：:||Semiconductor Science and Technology, Volume 25, Issue 3.|
|摘要:||GaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates with a current confinement by hydrogen (H) implantation. In order to ascertain the optimum implantation concentration for the current confinement layer of RCLEDs, the effects of implantation concentration (as-grown, 10(13), 10(14) and 10(15) ions cm(-2)) on the characteristics of a p-GaN cladding layer were investigated in terms of Hall measurements, photoluminescence (PL) spectra and x-ray (XRD) diffraction. The properties of PL, XRD and contact resistance of the epi-LED wafers with different implantation concentrations were also analyzed. An optimum H-implantation concentration of 10(14) ions cm(-2) has been determined based on the current confinement performance. Under this condition, the 10(14) ions cm(-2) implanted RCLED sample shows the higher electroluminescence intensity than that of the SiO(2)-insulated RCLED one. Furthermore, the light emission pattern of the 10(14) ions cm(-2) implanted RCLED also shows a superior directionality. The improved results could be attributed to the better current and photon confinements laterally in the light aperture.|
|Appears in Collections:||材料科學與工程學系|
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