Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44070
標題: A p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Charge Pump for Low Supply Voltages
作者: Hsu, C.P.
林泓均
Lin, H.C.
期刊/報告no:: Japanese Journal of Applied Physics, Volume 48, Issue 4.
摘要: In this paper, we propose a positive two-phase p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) charge pump with two auxiliary clocks to boost the gate biases of the switching transistors for low-supply-voltage applications. Owing to the effective boosting of the overdrive voltage of the charge transfer transistors, the proposed four-stage charge pump has high driving capacity and achieves a voltage gain of more than 90% with no load at a supply voltage of 1 V. The proposed charge pump was implemented using 0.18 mu m standard complementary metal-oxide-semiconductor field-effect transistor (CMOSFET) technology in an area of approximately 0.205 mm(2). The measurement results agree well with the simulated data, such as the simulated and measured output voltages without load reaching 8.6 and 8.28 V at a supply voltage of 1.8 V, as well as those with a 60 mu A loading current producing 6.2 and 6 V at a frequency of 10 MHz, respectively. (C) 2009 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/44070
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.48.04c069
Appears in Collections:電機工程學系所

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