請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/44072
標題: Characterization of sputtered Ta-Ru thin films for ink-jet heater applications
作者: Wuu, D.S.
洪瑞華
Chan, C.C.
Horng, R.H.
武東星
關鍵字: tantalum
ruthenium
resistivity
oxidation
sputtering
printhead
期刊/報告no:: Thin Solid Films, Volume 373, Issue 1-2, Page(s) 84-88.
摘要: This paper discusses several structural, electrical and oxidation characteristics of co-sputtered Ta-Ru alloy films on oxidized Si substrates. From X-ray examination, the Ta1Ru1 phase has formed and dominates in the compositions exceeding 54 at.% Ru content. The resistivity of the Ta-Ru thin films can reach a maximum of similar to 320 mu Omega -cm in the composition range between 35 and 54 at.% Ru. After thermal treatment in air (600 degreesC 1 h), Ru-rich samples show a lesser increase in resistivity than Ta-rich ones. The observed preferential oxidation of Ta in the Ta-Ru samples can be further interpreted by thermodynamic calculations. The Ta-rich surface oxide is believed to be responsible for the passivating ability of the Ru atom towards oxidation at high temperatures. This results in the Ru of the metallic state although the oxidation of Ta occurs. Finally, the Ta-Ru thin films without any additional passivation were fabricated in heater arrays to perform the ink-jet lifetime test. A lifetime over 1 x 10(7) driving pulses can be achieved, which indicates Ta-Ru has high potential in thermal ink-jet applications. (C) 2000 Elsevier Science S.A. All rights reserved.
URI: http://hdl.handle.net/11455/44072
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/s0040-6090(00)01098-1
顯示於類別:材料科學與工程學系

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