Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44080
標題: Fabrication of selective-emitter silicon heterojunction solar cells using hot-wire chemical vapor deposition and laser doping
作者: Wu, B.R.
洪瑞華
Wuu, D.S.
Wan, M.S.
Mao, H.Y.
Horng, R.H.
武東星
關鍵字: Selective emitter
Silicon
Heterojunction
Solar cells
Hot-wire
chemical vapor deposition
Laser doping
crystalline silicon
si heterojunction
films
cvd
temperature
layer
期刊/報告no:: Thin Solid Films, Volume 517, Issue 17, Page(s) 4749-4752.
摘要: The Si heterojunction (HJ) solar cells were fabricated on the textured p-type mono-crystalline Si (c-Si) substrates using hot-wire chemical vapor deposition (HWCVD). In view of the potential for the bottom cell in a hybrid junction structure, the microcrystalline Si (mu c-Si) film was used as the emitter with various PH(3) dilution ratios. Prior to the n-mu c-Si emitter deposition, a 5 nm-thick intrinsic amorphous Si layer (i-a-Si) was grown to passivate the c-Si surface. In order to improve the indium-tin oxide (ITO)/emitter front contact without using the higher PH(3) doping concentration, a laser doping technique was employed to improve the ITO/n-mu c-Si contact via the formation of the selective emitter structure. For a cell structure of Ag grid/ITO/n-mu c-Si emitter/i-a-Si/textured p-c-Si/Al-electrode, the conversion efficiency (AM1.5) can be improved from 13.25% to 14.31% (cell area: 2 cm x 2 cm) via a suitable selective laser doping process. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/44080
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2009.03.119
Appears in Collections:材料科學與工程學系

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