Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44085
標題: Hot-wire CVD deposited n-type mu c-Si films for mu c-Si/c-Si heterojunction solar cell applications
作者: Lien, S.Y.
洪瑞華
Wuu, D.S.
Wu, B.R.
Horng, R.H.
Tseng, M.C.
Yu, H.H.
武東星
關鍵字: microcrystalline silicon
hot-wire chemical vapor deposition (HWCVD)
solar cell
atomic force microscopy
crystalline silicon
emitter
期刊/報告no:: Thin Solid Films, Volume 516, Issue 5, Page(s) 765-769.
摘要: Phosphorous-doped microcrystalline silicon (mu c-Si) films were prepared using hot-wire chemical vapor deposition (HWCVD). Structural, electrical and optical properties of these thin films were systematically studied as a function of PH3 gas mixture ratio. We report recent results for p-type crystalline silicon-based heterojunction (HJ) solar cells using the HWCVD n-mu c-Si film to form an n-p junction. The surface morphology of the crystalline Si substrate after hydrogen treatment was examined using atomic force microscopy. A transfer length method was used to modify the indium-tin-oxide (ITO) deposition parameters in order to reduce front ITO/n-mu c-Si contact resistance. In our best solar cell sample (1 cm(2)) without any buffer layer, the conversion efficiency of 15. 1% has been achieved with an open circuit voltage of 0.615 V, fill factor of 0.71 and short circuit current density of 34.6 mA/cm(2) under 100 mW/cm(2) condition. The spectral response of this cell will also be discussed. (c) 2007 Elsevier B.V All rights reserved.
URI: http://hdl.handle.net/11455/44085
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2007.06.054
Appears in Collections:材料科學與工程學系

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