Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44102
標題: Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers
作者: Tsai, Y.L.
洪瑞華
Horng, R.H.
Tseng, M.C.
Kuo, C.H.
Liu, P.L.
Wuu, D.S.
Lin, D.Y.
武東星
劉柏良
關鍵字: Stresses
X-ray diffraction
Metalorganic chemical vapor deposition
GaInP
lattice mismatch
crystals
期刊/報告no:: Journal of Crystal Growth, Volume 311, Issue 11, Page(s) 3220-3224.
摘要: In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be similar to 0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/44102
ISSN: 0022-0248
文章連結: http://dx.doi.org/10.1016/j.jcrysgro.2009.03.028
Appears in Collections:材料科學與工程學系

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