Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44107
標題: Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates
作者: Wang, W.K.
洪瑞華
Wuu, D.S.
Lin, S.H.
Han, P.
Horng, R.H.
Hsu, T.C.
Huo, D.T.C.
Jou, M.J.
Yu, Y.H.
Lin, A.K.
武東星
韓 斌
關鍵字: GaN
InGaN
light-emitting diode (LED)
near ultraviolet (UV)
patterned
sapphire substrate (PSS)
light-emitting-diodes
output power
epitaxy
layers
期刊/報告no:: Ieee Journal of Quantum Electronics, Volume 41, Issue 11, Page(s) 1403-1409.
摘要: The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 pro; spacing: 3 mu m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D-h = 1.5 mu m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.
URI: http://hdl.handle.net/11455/44107
ISSN: 0018-9197
文章連結: http://dx.doi.org/10.1109/jqe.2005.857057
Appears in Collections:材料科學與工程學系

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.