請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/44110
標題: Phosphor-free white light from InGaN blue and green light-emitting diode chips covered with semiconductor-conversion AlGaInP epilayer
作者: Horng, R.H.
洪瑞華
Han, P.
Wuu, D.S.
武東星
韓 斌
關鍵字: AlGaInP
chromaticity coordinates
correlated color temperature
InGaN
light-emitting diode (LED)
phosphor-free white lamp
illumination
期刊/報告no:: Ieee Photonics Technology Letters, Volume 20, Issue 13-16, Page(s) 1139-1141.
摘要: A phosphor-free white lamp was fabricated using the InGaN-based blue and green light-emitting diode (LED) chips covered with semiconductor-conversion layer AlGaInP. The lamp can provide three bands: a 460-nm blue emission coming from the blue LED, a 555-nm green emission coming from the green LED, and 630-nm red emission coming from the excited AlGaInP epilayer. As 50 mA was injected into the white lamp at room temperature, the chromaticity coordinates and correlated color temperature (T(C)) are (0.338, 0.335) and 5348 K, respectively. By separating injection current into blue and green LED chips, T(C) of lamp can be tuned from about 4000 K to 5400 K.
URI: http://hdl.handle.net/11455/44110
ISSN: 1041-1135
文章連結: http://dx.doi.org/10.1109/lpt.2008.924882
顯示於類別:材料科學與工程學系

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