Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44116
標題: Near-ultraviolet InGaN/GaN light-emitting diodes grown on patterned sapphire substrates
作者: Wang, W.K.
洪瑞華
Wuu, D.S.
Shih, W.C.
Fang, J.S.
Lee, C.E.
Lin, W.Y.
Han, P.
Horng, R.H.
Hsu, T.C.
Huo, T.C.
Jou, M.J.
Lin, A.
Yu, Y.H.
武東星
韓 斌
關鍵字: GaN
InGaN
light-emitting diode
patterned sapphire substrate
dislocation density
white-light
threading dislocations
gan
brightness
leds
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 44, Issue 4B, Page(s) 2512-2515.
摘要: We describe the microstructure and optical properties of near-ultraviolet InGaN-GaN light-emitting diodes (LEDs) fabricated onto conventional and patterned sapphire substrates (PSSs) using metalorganic chemical vapor deposition. The PSS LED with an optimized hole depth (1.5 mu m) shows an improvement of the room-temperature photoluminescence intensity by one order of magnitude compared with that of the conventional LED. As much as a 63% increased light emission intensity of the PSS LED was obtained at a forward current of 20 mA. For a typical lamp-form PSS LED (at 20 mA), the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The increase of the output power could be partly due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, which was further confirmed by the transmission-electron-microscopy and etch-pit-density studies for the GaN-on-PSS samples. Moreover, the emitted light scattering at the GaN/PSS interface could also contribute to the enhancement of light extraction efficiency.
URI: http://hdl.handle.net/11455/44116
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.44.2512
Appears in Collections:材料科學與工程學系

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.