Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44192
標題: Solution-processed Li–Al layered-doublehydroxide platelet structures for high efficiency InGaN light emitting diodes
作者: Lin, Chia-Feng
Tsai, Peng-Han
Lin, Zhi-Yu
Uan, Jun-Yen
Lin, Chun-Min
Yang, Chung-Chieh
Shieh, Bing-Cheng
摘要: High-oriented Li–Al layered double hydroxide (LDH) films were grown on an InGaN light-emitting diode (LED) structures by immersing in an aqueous alkaline Al3+- and Li+-containing solution. The stand upward and adjacent Li-Al LDH platelet structure was formed on the LED structure as a textured film to increase the light extraction efficiency. The light output power of the LED structure with the Li-Al LDH platelet structure had a 31% enhancement compared with a conventional LED structure at 20 mA. The reverse leakage currents, at -5V, were measured at - 2.3×10-8A and -1.0×10-10A for the LED structures without and with the LDH film that indicated the Li-Al LDH film had the insulated property acted a passivation layer that had potential to replace the conventional SiO2 and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet structure and the insulated property covering whole the LED surface that has potential for high efficiency InGaN LED applications.
URI: http://hdl.handle.net/11455/44192
文章連結: http://dx.doi.org/10.1364/OE.20.00A669
Appears in Collections:材料科學與工程學系

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