Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44394
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dc.contributor.advisor武東星zh_TW
dc.contributor.advisorD. S. Wuuen_US
dc.contributor.authorC. C. Chiangen_US
dc.contributor.authorD. S. Wuuen_US
dc.contributor.authorY. P. Chenen_US
dc.contributor.authorT. H. Jawen_US
dc.contributor.authorR. H. Horngen_US
dc.contributor.other國立中興大學材料科學與工程學系zh_TW
dc.date2008zh_TW
dc.date.accessioned2014-06-06T08:12:14Z-
dc.date.available2014-06-06T08:12:14Z-
dc.identifier.issn1099-0062zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/44394-
dc.language.isoen_USzh_TW
dc.publisherUSA:Electrochemical Societyen_US
dc.relationElectrochem. Solid-State Lett., 11(1):J004-J007en_US
dc.subjectelectron mobilityen_US
dc.subjectelemental semiconductorsen_US
dc.subjectflexible structuresen_US
dc.subjectnoncrystalline structureen_US
dc.subjectsemiconductor devicesen_US
dc.subjectsemiconductor technologyen_US
dc.subjectseparationen_US
dc.subjectsiliconen_US
dc.subjectthin film transistorsen_US
dc.title(Electrochem. Solid-State Lett., 11(1):J004-J007)Fabrication of amorphous Si thin-film transistors on an engineered parylene template using a direct separation processen_US
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