請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/44735
標題: A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well
作者: Suen, Y.W.
楊秋忠
Young, C.C.
Chang, C.J.
Wu, J.C.
Wang, S.Y.
Lee, C.P.
關鍵字: double barrier tunneling diode
magnetic field
impurity state
quantum-confined states
probability
期刊/報告no:: Physica E, Volume 6, Issue 1-4, Page(s) 331-334.
摘要: We will present the observation of a light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the mete-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region. (C) 2000 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/11455/44735
ISSN: 1386-9477
文章連結: http://dx.doi.org/10.1016/s1386-9477(99)00166-6
顯示於類別:土壤環境科學系

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