Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/45014
標題: Nanocone SiGe antireflective thin films fabricated by ultrahigh-vacuum chemical vapor deposition with in situ annealing
作者: Chang, Y.M.
戴慶良
Dai, C.L.
Cheng, T.C.
Hsu, C.W.
關鍵字: SiGe
Thin films
Annealing
Nanostructures
Antireflective layer
Atomic force microscopy
silicon solar-cells
mobility enhancement
surface
morphology
substrate
mosfets
growth
layers
期刊/報告no:: Thin Solid Films, Volume 518, Issue 14, Page(s) 3782-3785.
摘要: In this study, we fabricated nanocone-presenting SiGe antireflection layers using only ultrahigh-vacuum chemical vapor deposition. In situ thermal annealing was adopted to cause SiGe clustering, yielding a characteristic nanocone array on the SiGe surface. Atomic force microscopy indicated that the SiGe nanocones had uniform height and distribution. Spectrophotometric measurements revealed that annealing at 900 degrees C yielded SiGe thin films possessing superior antireflective properties relative to those of the as-grown SiGe sample. We attribute this decrease in reflectance to the presence of the nanostructured cones. Prior to heat treatment, the mean reflectance of ultraviolet rays (wavelength <400 nm) of the SiGe thin film was ca. 61.7%; it reduced significantly to less than 28.5% when the SiGe thin film was annealed at 900 degrees C. Thus, the drop in reflectance of the SiGe thin film after thermal treatment exceeded 33%. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/45014
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2009.12.105
Appears in Collections:機械工程學系所

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