請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/46594
標題: Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates
作者: 洪瑞華
Tsai, T.Y.
武東星
Wuu, D.S.
Hung, M.T.
Tu, J.H.
Huang, S.C.
Horng, R.H.
Chiang, W.Y.
Tu, L.W.
關鍵字: InGaN
patterned sapphire substrates (PSSs)
selectively etched (SE)
threading dislocations (TDs)
410-nm light emitting diodes (LEDs)
gan films
efficiency
dislocations
luminescence
improvement
reduction
layers
期刊/報告no:: Ieee Transactions on Electron Devices, Volume 58, Issue 11, Page(s) 3962-3969.
摘要: A selectively etched (SE) GaN template for highpower 410-nm InGaN-based LEDs was fabricated, where 2-mu m-thick undoped GaN was grown on recess patterned sapphire substrates (PSSs). This was followed by H(3)PO(4) selective etching, 0.5-mu m-thick SiO(2) film deposition, and a final chemical-mechanical polishing process to remove the excess SiO(2). Three kinds of substrates, i.e., conventional sapphire substrates (CSSs), recess PSSs, and SE GaN templates, were used to grow the near-UV LEDs for comparison. The etched pit density of n-type GaN could then be reduced to 10(5) cm(-2), whereas the number of screw-type and edge-type threading dislocations decreased by 16.5% and 49.9%, respectively, since SiO(2) fillings on the SE GaN template hindered their propagation. The output power of a near-UV LED fabricated on the SE GaN template was 13% and 46% higher than that of a near-UV LED fabricated on recess PSSs and CSSs, respectively. A substantial improvement in performance can be attributed to the improved epilayer crystallinity and, also, the increased light scattering within the LED induced by SiO(2) fillings.
URI: http://hdl.handle.net/11455/46594
ISSN: 0018-9383
文章連結: http://dx.doi.org/10.1109/ted.2011.2164077
顯示於類別:精密工程研究所

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