Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46596
標題: InGaN light emitting diodes with a laser-treated tapered GaN structure
作者: Huang, W.C.
韓 斌
Lin, C.F.
Hsieh, T.H.
Chen, S.H.
Lin, M.S.
Chen, K.T.
Lin, C.M.
Han, P.
林佳鋒
關鍵字: extraction efficiency enhancement
surface
期刊/報告no:: Optics Express, Volume 19, Issue 19, Page(s) A1126-A1134.
摘要: InGaN light-emitting diode (LED) structures get an air-void structure and a tapered GaN structure at the GaN/sapphire interface through a laser decomposition process and a lateral wet etching process. The light output power of the treated LED structure had a 70% enhancement compared to a conventional LED structure at 20 mA. The intensities and peak wavelengths of the micro-photoluminescence spectra were varied periodically by aligning to the air-void (461.8nm) and the tapered GaN (459.5nm) structures. The slightly peak wavelength blueshift phenomenon of the EL and the PL spectra were caused by a partial compressed strain release at the GaN/sapphire interface when forming the tapered GaN structure. The relative internal quantum efficiency of the treated LED structure (70.3%) was slightly increased compared with a conventional LED (67.8%) caused by the reduction of the piezoelectric field in the InGaN active layer. (C) 2011 Optical Society of America
URI: http://hdl.handle.net/11455/46596
ISSN: 1094-4087
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