請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/46625
標題: The variation of microstructure in Czochralski silicon induced by low-high two step anneal
作者: 洪瑞華
Kung, C.Y.
Liu, C.M.
Hsu, W.
Horng, R.H.
關鍵字: oxygen precipitation retardation
defects
dislocations
model
期刊/報告no:: Journal of Applied Physics, Volume 83, Issue 1, Page(s) 56-59.
摘要: Systematic low-high two-step and high-low-high three-step annealing studies were conducted to investigate the microdefects generated in Czochralski silicon wafers. It was found that cluster precipitates entangled with dislocations are annihilated during extended low temperature anneal. A model involving the recombination of vacancies with interstitials is proposed to explain this phenomenon. (C) 1998 American Institute of Physics.
URI: http://hdl.handle.net/11455/46625
ISSN: 0021-8979
文章連結: http://dx.doi.org/10.1063/1.366701
顯示於類別:精密工程研究所

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