Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46661
標題: Highly Strained Metastable Heterojunction between Wurtzite GaN(0001) and Cubic CrN(111)
作者: Liu, P.L.
劉柏良
關鍵字: total-energy calculations
light-emitting-diodes
chemical lift-off
gan
thin-films
wave basis-set
ultrasoft pseudopotentials
buffer layers
c-sapphire
n system
fabrication
期刊/報告no:: Journal of the Electrochemical Society, Volume 157, Issue 11, Page(s) D577-D581.
摘要: We present first-principles calculations on the heterojunction between a wurtzite GaN(0001) film and a cubic CrN(111) substrate. Atomic and electronic structures of the interface in our heteroepitaxial compound semiconductor models are investigated with the use of four models with fixed stoichiometry Cr(16)N(16)Ga(12)N(12). The relative stability of different models of the GaN(0001)/CrN(111) interface is examined as a function of the chemical potentials of Ga and Cr, and the most favorable interface consists of sixfold-coordinated Ga with three Ga-N and three Ga-Cr bonds. This interface structure gives rise to N-polarity in the GaN(0001) epitaxial film. The findings agree with previously reported experimental results. A detailed analysis of the bonding arrangements of the lowest energy interface indicates that hexagonal Cr(2)GaN "bulklike" interatomic distances relax this highly strained meta-stable interface. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489369] All rights reserved.
URI: http://hdl.handle.net/11455/46661
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/1.3489369
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