Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46756
DC FieldValueLanguage
dc.contributor.advisor江雨龍zh_TW
dc.contributor.advisorYeu-Long Jiangen_US
dc.contributor.authorY. L. Jiangen_US
dc.contributor.authorS. H. Chenen_US
dc.contributor.authorL. H. Chenen_US
dc.contributor.authorK. S. Linen_US
dc.contributor.authorW. H. Wuen_US
dc.contributor.authorC. H. Wuen_US
dc.contributor.authorY. S. Liaoen_US
dc.contributor.authorL. H. Changen_US
dc.contributor.other國立中興大學光電工程研究所zh_TW
dc.date2000-12zh_TW
dc.date.accessioned2014-06-06T08:21:16Z-
dc.date.available2014-06-06T08:21:16Z-
dc.identifier.urihttp://hdl.handle.net/11455/46756-
dc.language.isoen_USzh_TW
dc.relation2000 IEDMS Symposium A, Page(s) 285-288.en_US
dc.subjectHigh crystallinityen_US
dc.subjectlarge grain sizeen_US
dc.subjectc-Si:H films depositionen_US
dc.subjectECR-CVDen_US
dc.title(2000 IEDMS Symposium A,p285-p288)High crystallinity and large grain size c-Si:H films deposition by ECR-CVDen_US
Appears in Collections:光電工程研究所
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