Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46770
標題: The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250 ℃
作者: Y. L. Jiang
R. Y. Wang
H. L Hwang
T. R. Yew
關鍵字: Electrical Properties
Doped Polycrystalline Silicon Thin Films
Electron Cyclotron Resonance
Chemical Vapor Deposition
250 ℃
URI: http://hdl.handle.net/11455/46770
Appears in Collections:光電工程研究所

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