Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46770
DC FieldValueLanguage
dc.contributor.advisor江雨龍zh_TW
dc.contributor.advisorYeu-Long Jiangen_US
dc.contributor.authorY. L. Jiangen_US
dc.contributor.authorR. Y. Wangen_US
dc.contributor.authorH. L Hwangen_US
dc.contributor.authorT. R. Yewen_US
dc.contributor.other國立中興大學光電工程研究所zh_TW
dc.date1997zh_TW
dc.date.accessioned2014-06-06T08:21:18Z-
dc.date.available2014-06-06T08:21:18Z-
dc.identifier.urihttp://hdl.handle.net/11455/46770-
dc.language.isoen_USzh_TW
dc.relationMaterials Research Society l997 Spring Meetingen_US
dc.subjectElectrical Propertiesen_US
dc.subjectDoped Polycrystalline Silicon Thin Filmsen_US
dc.subjectElectron Cyclotron Resonanceen_US
dc.subjectChemical Vapor Depositionen_US
dc.subject250 ℃en_US
dc.titleThe Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250 ℃en_US
Appears in Collections:光電工程研究所
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