Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46772
標題: (Extended Abstracts of ICSFS-7,p445)P type a-SiC:H Window Layer Deposited by Novel Boron-atom-treatment method
作者: Y. L. Jiang
Y. H. Shing
S. H. Lee
H. L. Hwang
關鍵字: P type
SiC:H Window Layer
Novel Boron-atom-treatment method
出版社: USA:Elsevier
URI: http://hdl.handle.net/11455/46772
Appears in Collections:光電工程研究所

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