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標題: (Extended Abstracts of ICSFS-7,p445)P type a-SiC:H Window Layer Deposited by Novel Boron-atom-treatment method
作者: Y. L. Jiang
Y. H. Shing
S. H. Lee
H. L. Hwang
關鍵字: P type
SiC:H Window Layer
Novel Boron-atom-treatment method
出版社: USA:Elsevier
Appears in Collections:光電工程研究所



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