Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46776
DC FieldValueLanguage
dc.contributor.advisor江雨龍zh_TW
dc.contributor.advisorYeu-Long Jiangen_US
dc.contributor.authorY. L. Jiangen_US
dc.contributor.authorH. L. Hwangen_US
dc.contributor.authorM. S. Fengen_US
dc.contributor.other國立中興大學光電工程研究所zh_TW
dc.date1990zh_TW
dc.date.accessioned2014-06-06T08:21:18Z-
dc.date.available2014-06-06T08:21:18Z-
dc.identifier.urihttp://hdl.handle.net/11455/46776-
dc.language.isoen_USzh_TW
dc.publisherUSA:Materials Research Societyen_US
dc.relationMaterials Research Society Symposium Proceedings, Page(s) 335-340.en_US
dc.subjectCarrier Transporten_US
dc.subjecta-Si:H/a-Sil-xCx:H Quantum Well Structureen_US
dc.subjecti Layeren_US
dc.subjectp-i-n Structureen_US
dc.title(Materials Research Society Symposium Proceedings,192:335-340)Studies on Carrier Transport Through a-Si:H/a-Sil-xCx:H Quantum Well Structures Imbedded in the i Layer of a p-i-n Structureen_US
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