Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46778
標題: (Proceedings of the 1989 Electronic Devices and Materials Symposium:267-272)Remarks on Sequential Resonant Tunneling Through the a-Si:H/a-Sil-xCx:H Multiquantum Well Imbedded in the p-i-n Structure
作者: Y. L. Jiang
H. L. Hwang
關鍵字: Sequential Resonant Tunneling
a-Si:H/a-Sil-xCx:H Multiquantum Well
p-i-n Structure
URI: http://hdl.handle.net/11455/46778
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