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標題: (Proceedings of the 1989 Electronic Devices and Materials Symposium:267-272)Remarks on Sequential Resonant Tunneling Through the a-Si:H/a-Sil-xCx:H Multiquantum Well Imbedded in the p-i-n Structure
作者: Y. L. Jiang
H. L. Hwang
關鍵字: Sequential Resonant Tunneling
a-Si:H/a-Sil-xCx:H Multiquantum Well
p-i-n Structure
Appears in Collections:光電工程研究所



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