Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/47618
標題: Epitaxial Growth of High-Indium and High-Aluminum-Content GaN-Based Semiconductors for Energy Optoelectronic Device Applications
高銦與高鋁含量氮化鎵系列材料之開發與光電能源元件整合研究-總計畫
作者: 武東星
馮哲川
關鍵字: 光電工程
基礎研究
URI: http://hdl.handle.net/11455/47618
其他識別: NSC98-2221-E005-005-MY3
文章連結: http://grbsearch.stpi.narl.org.tw/GRB/result.jsp?id=2012952&plan_no=NSC98-2221-E005-005-MY3&plan_year=99&projkey=PB9902-1097&target=plan&highStr=*&check=0&pnchDesc=%E9%AB%98%E9%8A%A6%E8%88%87%E9%AB%98%E9%8B%81%E5%90%AB%E9%87%8F%E6%B0%AE%E5%8C%96%E9%8E%B5%E7%B3%BB%E5%88%97%E6%9D%90%E6%96%99%E4%B9%8B%E9%96%8B%E7%99%BC%E8%88%87%E5%85%89%E9%9B%BB%E8%83%BD%E6%BA%90%E5%85%83%E4%BB%B6%E6%95%B4%E5%90%88%E7%A0%94%E7%A9%B6-%E7%B8%BD%E8%A8%88%E7%95%AB
Appears in Collections:材料科學與工程學系

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