Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/47634
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dc.contributor.author武東星zh_TW
dc.contributor.author馮哲川zh_TW
dc.contributor.other國立中興大學材料科學與工程學系(所)zh_TW
dc.contributor.other行政院國家科學委員會zh_TW
dc.date2012zh_TW
dc.date.accessioned2014-06-06T08:24:49Z-
dc.date.available2014-06-06T08:24:49Z-
dc.identifierNSC98-2221-E005-005-MY3zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/47634-
dc.language.isozh_TWzh_TW
dc.subject商品化zh_TW
dc.subject光電工程zh_TW
dc.titleEpitaxial Growth of High-Indium and High-Aluminum-Content Gan-Based Semiconductors for Energy Optoelectronic Device Applicationsen_US
dc.title高銦與高鋁含量氮化鎵系列材料之開發與光電能源元件整合研究-總計畫:高銦與高鋁含量氮化鎵系列材料之開發與光電能源元件整合研究zh_TW
dc.typeResearch Reportszh_TW
Appears in Collections:材料科學與工程學系
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