Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/48760
標題: The Bulk Defect Generation in Heavy Doped Cz Silicon after a Simulated CMOS Thermal Process
Cz重摻硼矽晶經模擬的CMOS高溫製程晶片內部微觀缺陷的變化情形
作者: 貢中元
關鍵字: 材料科技
應用研究
URI: http://hdl.handle.net/11455/48760
其他識別: NSC91-2215-E005-003
文章連結: http://grbsearch.stpi.narl.org.tw/GRB/result.jsp?id=784135&plan_no=NSC91-2215-E005-003&plan_year=91&projkey=PB9108-3099&target=plan&highStr=*&check=0&pnchDesc=Cz%E9%87%8D%E6%91%BB%E7%A1%BC%E7%9F%BD%E6%99%B6%E7%B6%93%E6%A8%A1%E6%93%AC%E7%9A%84CMOS%E9%AB%98%E6%BA%AB%E8%A3%BD%E7%A8%8B%E6%99%B6%E7%89%87%E5%85%A7%E9%83%A8%E5%BE%AE%E8%A7%80%E7%BC%BA%E9%99%B7%E7%9A%84%E8%AE%8A%E5%8C%96%E6%83%85%E5%BD%A2
Appears in Collections:電機工程學系所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.