Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/50133
標題: Tight-Binding Band Study of Sige and Insb for Nanoscale Cmos Devices Applications
緊束縛法研究矽鍺合金與銻化銦能帶特性並應用於奈米級CMOS元件之研究
作者: 林中一
劉致為
張書通
關鍵字: 物理類
基礎研究
URI: http://hdl.handle.net/11455/50133
其他識別: NSC98-2112-M005-004-MY3
文章連結: http://grbsearch.stpi.narl.org.tw/GRB/result.jsp?id=1881104&plan_no=NSC98-2112-M005-004-MY3&plan_year=98&projkey=PA9807-1363&target=plan&highStr=*&check=0&pnchDesc=%E7%B7%8A%E6%9D%9F%E7%B8%9B%E6%B3%95%E7%A0%94%E7%A9%B6%E7%9F%BD%E9%8D%BA%E5%90%88%E9%87%91%E8%88%87%E9%8A%BB%E5%8C%96%E9%8A%A6%E8%83%BD%E5%B8%B6%E7%89%B9%E6%80%A7%E4%B8%A6%E6%87%89%E7%94%A8%E6%96%BC%E5%A5%88%E7%B1%B3%E7%B4%9ACMOS%E5%85%83%E4%BB%B6%E4%B9%8B%E7%A0%94%E7%A9%B6
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